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Characteristics of InN thin films grown using a PAMBE technique

Identifieur interne : 00BA53 ( Main/Repository ); précédent : 00BA52; suivant : 00BA54

Characteristics of InN thin films grown using a PAMBE technique

Auteurs : RBID : Pascal:04-0573925

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Traitement par plasma, Photoluminescence, Microscopie électronique balayage, RHEED, Dépendance température, Dislocation, Indium nitrure, Composé binaire, Semiconducteur III-V, Film, Réseau hexagonal, Structure basaltique, Polycristal, InN, In N, Substrat verre, Substrat SiO2, 8115H, 7855C, Substrat Al2O3, Substrat YSZ.

English descriptors

KwdEn :
- Binary compounds, Columnar structure, Crystal growth from vapors, Dislocations, Experimental study, Films, Hexagonal lattices, III-V semiconductors, Indium nitrides, Molecular beam epitaxy, Photoluminescence, Plasma assisted processing, Polycrystals, RHEED, Scanning electron microscopy, Temperature dependence.

Abstract

Indium nitride is not yet fully characterized or understood, despite being the endpoint of the commercially valuable In_xGa_1-xN system. There is still considerable controversy over such fundamental issues as the band gap, with recent evidence suggesting that it may be as low as 0.6eV. We have deposited InN films on a range of substrates, including silica glass, (0001) sapphire and (111) YSZ, using plasma assisted molecular beam epitaxy (PAMBE). These films were characterized, during growth and ex situ, and a strong luminescence feature between 0.7 and 0.8eV was found in all films, regardless of quality.

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Pascal:04-0573925

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Characteristics of InN thin films grown using a PAMBE technique</title>
<author><name sortKey="Kinsey, Robert J" uniqKey="Kinsey R">Robert J. Kinsey</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anderson, Phillip A" uniqKey="Anderson P">Phillip A. Anderson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kendrick, Chito E" uniqKey="Kendrick C">Chito E. Kendrick</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Reeves, Roger J" uniqKey="Reeves R">Roger J. Reeves</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Durbin, Steven M" uniqKey="Durbin S">Steven M. Durbin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0573925</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 04-0573925 INIST</idno>
<idno type="RBID">Pascal:04-0573925</idno>
<idno type="wicri:Area/Main/Corpus">00AC59</idno>
<idno type="wicri:Area/Main/Repository">00BA53</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Columnar structure</term>
<term>Crystal growth from vapors</term>
<term>Dislocations</term>
<term>Experimental study</term>
<term>Films</term>
<term>Hexagonal lattices</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Molecular beam epitaxy</term>
<term>Photoluminescence</term>
<term>Plasma assisted processing</term>
<term>Polycrystals</term>
<term>RHEED</term>
<term>Scanning electron microscopy</term>
<term>Temperature dependence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Epitaxie jet moléculaire</term>
<term>Traitement par plasma</term>
<term>Photoluminescence</term>
<term>Microscopie électronique balayage</term>
<term>RHEED</term>
<term>Dépendance température</term>
<term>Dislocation</term>
<term>Indium nitrure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Film</term>
<term>Réseau hexagonal</term>
<term>Structure basaltique</term>
<term>Polycristal</term>
<term>InN</term>
<term>In N</term>
<term>Substrat verre</term>
<term>Substrat SiO2</term>
<term>8115H</term>
<term>7855C</term>
<term>Substrat Al2O3</term>
<term>Substrat YSZ</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Indium nitride is not yet fully characterized or understood, despite being the endpoint of the commercially valuable In<sub>x</sub>
Ga<sub>1-x</sub>
N system. There is still considerable controversy over such fundamental issues as the band gap, with recent evidence suggesting that it may be as low as 0.6eV. We have deposited InN films on a range of substrates, including silica glass, (0001) sapphire and (111) YSZ, using plasma assisted molecular beam epitaxy (PAMBE). These films were characterized, during growth and ex situ, and a strong luminescence feature between 0.7 and 0.8eV was found in all films, regardless of quality.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Characteristics of InN thin films grown using a PAMBE technique</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>ONR Indium Nitride Workshop: Proceedings of the First International Indium Nitride Workshop, 16-20 November 2003, Fremantle, Australia</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>KINSEY (Robert J.)</s1>
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<fA11 i1="02" i2="1"><s1>ANDERSON (Phillip A.)</s1>
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<fA11 i1="03" i2="1"><s1>KENDRICK (Chito E.)</s1>
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<fA11 i1="04" i2="1"><s1>REEVES (Roger J.)</s1>
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<fA11 i1="05" i2="1"><s1>DURBIN (Steven M.)</s1>
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<fA12 i1="01" i2="1"><s1>BUTCHER (K. S. A.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Department of Physics and Astronomy, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Physics Department, Macquarie University</s1>
<s2>Sydney, NSW 2109</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>US Office of Naval Research (ONR)</s1>
<s3>USA</s3>
<s9>patr.</s9>
</fA18>
<fA20><s1>167-172</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<s1>© 2004 INIST-CNRS. All rights reserved.</s1>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Indium nitride is not yet fully characterized or understood, despite being the endpoint of the commercially valuable In<sub>x</sub>
Ga<sub>1-x</sub>
N system. There is still considerable controversy over such fundamental issues as the band gap, with recent evidence suggesting that it may be as low as 0.6eV. We have deposited InN films on a range of substrates, including silica glass, (0001) sapphire and (111) YSZ, using plasma assisted molecular beam epitaxy (PAMBE). These films were characterized, during growth and ex situ, and a strong luminescence feature between 0.7 and 0.8eV was found in all films, regardless of quality.</s0>
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<fC02 i1="02" i2="3"><s0>001B70H55C</s0>
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<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>04</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Traitement par plasma</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Plasma assisted processing</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>06</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>06</s5>
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<fC03 i1="06" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>07</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>RHEED</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>RHEED</s0>
<s5>08</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>09</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>09</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Dislocation</s0>
<s5>10</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Dislocations</s0>
<s5>10</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>16</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>16</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>17</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Film</s0>
<s5>18</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Films</s0>
<s5>18</s5>
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<s5>19</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Hexagonal lattices</s0>
<s5>19</s5>
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<s5>20</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Columnar structure</s0>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Estructura columnar</s0>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>21</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>21</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>In N</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Substrat SiO2</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Substrat Al2O3</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Substrat YSZ</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fN21><s1>327</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
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</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Workshop on Indium Nitride</s1>
<s2>1</s2>
<s3>Fremantle AUS</s3>
<s4>2003-11-16</s4>
</fA30>
</pR>
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</inist>
</record>

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Characteristics of InN thin films grown using a PAMBE technique

Characteristics of InN thin films grown using a PAMBE technique

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri